Title :
Arithmetic unit design using 180nm TSV-based 3D stacking technology
Author :
Ouyang, J. ; Sun, G. ; Chen, Y. ; Duan, L. ; Zhang, T. ; Xie, Y. ; Irwin, M.J.
Author_Institution :
Dept. of Comput. Sci. & Eng., Pennsylvania State Univ., State College, PA, USA
Abstract :
We describe the design of two three dimensional arithmetic units (a 3D adder and a 3D multiplier) that are implemented using through-silicon-via 3D stacking technology. Compared to their 2D counterparts, our 3D adder incurs 10.6-34.3% less delay and 11.0-46.1% less energy when the width increases from 12-bit to 72-bit; the 32 times 32 3D multiplier incurs 14.4% less delay and 6.8% less energy, according to the post place and route results. The prototype chip including the implementations of a 3D adder, a 3D multiplier, and simple test interface has been delivered for fabrication in MIT Lincoln Laboratory, using their 3-tier SOI based 3D technology.
Keywords :
adders; field effect logic circuits; integrated circuit design; integrated circuit interconnections; multiplying circuits; silicon-on-insulator; 3-tier SOI based 3D technology; 3D adder; 3D multiplier; TSV-based 3D stacking technology; arithmetic unit design; size 180 nm; through-silicon-via 3D stacking technology; Adders; Delay; Digital arithmetic; Fabrication; Integrated circuit interconnections; Laboratories; Prototypes; Stacking; Testing; Through-silicon vias;
Conference_Titel :
3D System Integration, 2009. 3DIC 2009. IEEE International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-4511-0
Electronic_ISBN :
978-1-4244-4512-7
DOI :
10.1109/3DIC.2009.5306565