• DocumentCode
    2214151
  • Title

    Growth and characterization of Bi2Te3 nanostructures

  • Author

    Craps, M. ; Gothard, N. ; Rao, R. ; Gaillard, J. ; Tritt, T. ; Rao, A.M.

  • Author_Institution
    Dept. of Phys. & Astron., Clemson Univ., SC, USA
  • fYear
    2005
  • fDate
    19-23 June 2005
  • Firstpage
    292
  • Lastpage
    294
  • Abstract
    Bulk Bi2Te3 is one of the best known thermoelectric materials with a ZT ∼1 at room temperature. Theoretical studies have suggested that low-dimensional materials may exhibit ZT values that exceed 1. In this study, we used the pulsed laser deposition method to prepare Bi2Te3 nanostructures by ablating a rotating Bi2Te3 target in an inert atmosphere. Silicon or quartz substrates are pretreated with poly-1-lysine to form an adhesion layer for 10, 20, and 30 nm colloidal Au particles which serve as catalyst seed particles for the growth of the nanostructures. Alternatively, we have also prepared Bi2Te3 nanostructures by subliming Bi2Te3 powder in the presence of gold coated substrates. Results from electron microscopy and vibrational spectroscopic studies are presented.
  • Keywords
    Raman spectra; bismuth alloys; electron microscopy; nanowires; pulsed laser deposition; sublimation; tellurium alloys; Bi2Te3; Raman spectra; adhesion layer; electron microscopy; low-dimensional materials; nanostructures; nanowires; powder; pulsed laser deposition; room temperature; sublimation; thermoelectric materials; vibrational spectroscopy; Bismuth; Gold; Nanostructured materials; Nanostructures; Optical materials; Optical pulses; Pulsed laser deposition; Tellurium; Temperature; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2005. ICT 2005. 24th International Conference on
  • ISSN
    1094-2734
  • Print_ISBN
    0-7803-9552-2
  • Type

    conf

  • DOI
    10.1109/ICT.2005.1519943
  • Filename
    1519943