Title :
Growth and characterization of Bi2Te3 nanostructures
Author :
Craps, M. ; Gothard, N. ; Rao, R. ; Gaillard, J. ; Tritt, T. ; Rao, A.M.
Author_Institution :
Dept. of Phys. & Astron., Clemson Univ., SC, USA
Abstract :
Bulk Bi2Te3 is one of the best known thermoelectric materials with a ZT ∼1 at room temperature. Theoretical studies have suggested that low-dimensional materials may exhibit ZT values that exceed 1. In this study, we used the pulsed laser deposition method to prepare Bi2Te3 nanostructures by ablating a rotating Bi2Te3 target in an inert atmosphere. Silicon or quartz substrates are pretreated with poly-1-lysine to form an adhesion layer for 10, 20, and 30 nm colloidal Au particles which serve as catalyst seed particles for the growth of the nanostructures. Alternatively, we have also prepared Bi2Te3 nanostructures by subliming Bi2Te3 powder in the presence of gold coated substrates. Results from electron microscopy and vibrational spectroscopic studies are presented.
Keywords :
Raman spectra; bismuth alloys; electron microscopy; nanowires; pulsed laser deposition; sublimation; tellurium alloys; Bi2Te3; Raman spectra; adhesion layer; electron microscopy; low-dimensional materials; nanostructures; nanowires; powder; pulsed laser deposition; room temperature; sublimation; thermoelectric materials; vibrational spectroscopy; Bismuth; Gold; Nanostructured materials; Nanostructures; Optical materials; Optical pulses; Pulsed laser deposition; Tellurium; Temperature; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 2005. ICT 2005. 24th International Conference on
Print_ISBN :
0-7803-9552-2
DOI :
10.1109/ICT.2005.1519943