Title :
Characterization of ZnO nanowire field-effect transistors exposed to high energy proton radiation
Author :
Hong, Woong-Ki ; Yoon, Ahnsook ; Song, Sunghoon ; Shin, Kwanwoo ; Lee, Takhee
Author_Institution :
Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju
Abstract :
ZnO nanowires (NWs) are synthesized by thermal evaporation method. The ZnO nanowire field-effect transistors (FETs) are fabricated and characterized. The fabricated FETs exhibit transconductance of 5.3 nS, mobility of 10.2 cm2/V sec, and on/off current ratio of 105. ZnO NW-FET devices exposed to high energy (35 MeV) proton irradiation exhibit punch-through and threshold voltage shift.
Keywords :
field effect transistors; nanoelectronics; nanowires; proton effects; zinc compounds; FET fabrication; ZnO; high energy proton radiation; nanowire field-effect transistor; thermal evaporation method; Diffraction; FETs; Gold; Materials science and technology; Nanoscale devices; Powders; Protons; Scanning electron microscopy; Substrates; Zinc oxide; ZnO; field effect transistor; nanowire; proton;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0540-4
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388820
