• DocumentCode
    2214162
  • Title

    Characterization of ZnO nanowire field-effect transistors exposed to high energy proton radiation

  • Author

    Hong, Woong-Ki ; Yoon, Ahnsook ; Song, Sunghoon ; Shin, Kwanwoo ; Lee, Takhee

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju
  • Volume
    1
  • fYear
    2006
  • fDate
    22-25 Oct. 2006
  • Firstpage
    468
  • Lastpage
    469
  • Abstract
    ZnO nanowires (NWs) are synthesized by thermal evaporation method. The ZnO nanowire field-effect transistors (FETs) are fabricated and characterized. The fabricated FETs exhibit transconductance of 5.3 nS, mobility of 10.2 cm2/V sec, and on/off current ratio of 105. ZnO NW-FET devices exposed to high energy (35 MeV) proton irradiation exhibit punch-through and threshold voltage shift.
  • Keywords
    field effect transistors; nanoelectronics; nanowires; proton effects; zinc compounds; FET fabrication; ZnO; high energy proton radiation; nanowire field-effect transistor; thermal evaporation method; Diffraction; FETs; Gold; Materials science and technology; Nanoscale devices; Powders; Protons; Scanning electron microscopy; Substrates; Zinc oxide; ZnO; field effect transistor; nanowire; proton;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
  • Conference_Location
    Gyeongju
  • Print_ISBN
    978-1-4244-0540-4
  • Electronic_ISBN
    978-1-4244-0541-1
  • Type

    conf

  • DOI
    10.1109/NMDC.2006.4388820
  • Filename
    4388820
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2214162