DocumentCode :
2214192
Title :
SrTiO3 thin film decoupling capacitors on Si interposers for 3D system integration
Author :
Takemura, Koichi ; Kikuchi, Katsuya ; Ueda, Chihiro ; Baba, Kazuhiro ; Aoyagi, Masahiro ; Otsuka, Kanji
Author_Institution :
Assoc. of Super-Adv. Electron. Technol. (ASET), Sagamihara, Japan
fYear :
2009
fDate :
28-30 Sept. 2009
Firstpage :
1
Lastpage :
5
Abstract :
Simultaneous switching noise (SSN) suppression is a serious problem when operating 3D large-scale integrated circuits (3D LSIs). Thin film capacitors directly connected to LSIs using 3D integration technology are expected to reduce impedance for a power distribution network (PDN). We fabricated various multi-terminal 10 times 10 mm SrTiO3 thin film capacitors with the capacitance values larger than 1 muF, and explored the impedance in a high frequency region. The equivalent series resistance (ESR) and equivalent series inductance (ESL) values for the metal-insulator-metal (MIM) capacitors are affected by the number of contacts. Typically, the ESR values are less than 1 mOmega and the ESL values are estimated to be a few pH. The SrTiO3 MIM capacitors on Si interposers are suitable for reducing both self- and transfer-impedance of a PDN for 3D-LSIs.
Keywords :
MIS capacitors; capacitance; distribution networks; electric resistance; inductance; large scale integration; silicon; strontium compounds; thin film capacitors; 3D LSI; 3D large-scale integrated circuit; 3D system integration; Si; SrTiO3; capacitance value; equivalent series inductance; equivalent series resistance; interposer; metal-insulator-metal capacitor; power distribution network; simultaneous switching noise suppression; thin film decoupling capacitor; Impedance; Integrated circuit noise; Integrated circuit technology; Large scale integration; MIM capacitors; Paramagnetic resonance; Power systems; Switched capacitor networks; Switching circuits; Thin film circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
3D System Integration, 2009. 3DIC 2009. IEEE International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-4511-0
Electronic_ISBN :
978-1-4244-4512-7
Type :
conf
DOI :
10.1109/3DIC.2009.5306572
Filename :
5306572
Link To Document :
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