Boron ion implantation on Al-doped ZnO films for OLEDs transparent conducting electrodes

Author

Hong, Sang-Jin ; Heo, Gi-Seok ; Choi, Bum-Ho ; Shin, Dong-Chan

Author_Institution

Chosun Univ., Gwangju

Volume

1

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

470

Lastpage

471

Abstract

B⁺-implanted Al-doped ZnO (AZO) films were fabricated by ion implantation with various ion energies and doses for transparent conducting oxide (TCO) electrodes of organic light-emitting diodes (OLEDs). The resistance of the B-implanted AZO films was decreased with increasing ion dose. The work function of the implanted films was increased compared to the un-implanted AZO films. All implanted films exhibited high optical transmittance (average transmittance above 87%) in the visible range up to 800nm wavelength, we could control work function, resistance and transmittance individually by changing ion dose and ion energy during implantation.

Keywords

aluminium; boron; electrodes; ion implantation; organic light emitting diodes; work function; zinc compounds; Al-doped ZnO films; B; B - Interface; OLED; ZnO:Al; ZnO:Al - System; boron ion implantation; optical transmittance; organic light-emitting diodes; transparent conducting electrodes; work function; Boron; Conducting materials; Conductive films; Electric resistance; Electrodes; Ion implantation; Optical films; Organic light emitting diodes; Semiconductor films; Zinc oxide; AZO; Ion implantation; OLED; TCO; transmittance; work function;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE

Conference_Location

Gyeongju

Print_ISBN

978-1-4244-0541-1

Electronic_ISBN

978-1-4244-0541-1

Type

conf

DOI

10.1109/NMDC.2006.4388821

Filename

4388821