DocumentCode :
2214206
Title :
Variable-Load Constant-Efficiency Power Amplifier for Mobile Communications Applications
Author :
Leuzzi, G. ; Micheli, C.
Author_Institution :
Dept. Electrical Engineering, University of L´´Aquila; Monteluco di Roio, L´´Aquila 67040, Italy - leuzzi@ing.univaq.it
fYear :
2003
fDate :
Oct. 2003
Firstpage :
375
Lastpage :
377
Abstract :
A SiGe HBT Class-B power amplifier has been developed with a voltage-controlled variable load, for constant efficiency also at low power levels. The output matching network includes varactor diodes that can change the load impedance at the collector of the transistor. The load line can therefore be adjusted to provide a variable output power saturation level, shifting the peak of the efficiency to the desired power level. Constant efficiency over a wide output power range is obtained. This amplifier minimises power consumption for variable output power applications, as required in mobile communications systems.
Keywords :
Diodes; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Mobile communication; Power amplifiers; Power generation; Silicon germanium; Varactors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2003 33rd European
Conference_Location :
Munich, Germany
Print_ISBN :
1-58053-834-7
Type :
conf
DOI :
10.1109/EUMA.2003.340968
Filename :
4143032
Link To Document :
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