DocumentCode :
2214259
Title :
Electrical transport properties of VO2 nanowire field effect transistors
Author :
Maeng, Jongsun ; Jo, Gunho ; Kim, Tak-Wook ; Lee, Takhee
Author_Institution :
Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju
Volume :
1
fYear :
2006
fDate :
22-25 Oct. 2006
Firstpage :
476
Lastpage :
477
Abstract :
The VO2 nanowires were grown on Si3N4/Si substrate by a vapor transport method. Single crystalline rectangular structure of VO2nanowires is verified by scanning electron microscopy and transmission electron microscopy. Individual VO2 nanowires were fabricated into field effect transistors (FETs). Electrical transport properties are extracted from these nanowire FETs.
Keywords :
field effect transistors; nanowires; scanning electron microscopy; transmission electron microscopy; vanadium compounds; FET; VO2; VO2 - Binary; electrical transport properties; nanowire field effect transistors; scanning electron microscopy; single crystalline rectangular structure; transmission electron microscopy; vapor transport method; Chromium; Electrodes; FETs; Metal-insulator structures; Nanobioscience; Nanoscale devices; Scanning electron microscopy; Substrates; Temperature; Transmission electron microscopy; CVD; Catalyst free; nanowire; transistor; vanadium dioxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0540-4
Electronic_ISBN :
978-1-4244-0541-1
Type :
conf
DOI :
10.1109/NMDC.2006.4388824
Filename :
4388824
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2214259
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