• DocumentCode
    2214284
  • Title

    A 23 GHz Active Mixer with Integrated Diode Linearizer in SiGe BiCMOS Technology

  • Author

    Bao, Mingquan ; Li, Yinggang ; Cathelin, Andreia

  • Author_Institution
    Ericsson AB, Ericsson Research, MHSERC, Flöjelbergsgatan 2A, 43184 Mölndal, Sweden, Tel: +46 31 7472057
  • fYear
    2003
  • fDate
    Oct. 2003
  • Firstpage
    391
  • Lastpage
    393
  • Abstract
    Active mixers operating at 23 GHz are designed and fabricated in SiGe technology. An integrated diode linearizer is used to improve the linearity of the mixer. Measurement and simulation show excellent agreement. Typically, 10 dB double-sideband noise figure, 10 dBm IIP3 and 2 dB conversion gain are measured, featuring low noise and high linearity in a same design.
  • Keywords
    BiCMOS integrated circuits; Diodes; Germanium silicon alloys; Impedance; Linearity; Mixers; Noise figure; Radio frequency; Resistors; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2003 33rd European
  • Conference_Location
    Munich, Germany
  • Print_ISBN
    1-58053-834-7
  • Type

    conf

  • DOI
    10.1109/EUMA.2003.340972
  • Filename
    4143036