DocumentCode
2214284
Title
A 23 GHz Active Mixer with Integrated Diode Linearizer in SiGe BiCMOS Technology
Author
Bao, Mingquan ; Li, Yinggang ; Cathelin, Andreia
Author_Institution
Ericsson AB, Ericsson Research, MHSERC, Flöjelbergsgatan 2A, 43184 Mölndal, Sweden, Tel: +46 31 7472057
fYear
2003
fDate
Oct. 2003
Firstpage
391
Lastpage
393
Abstract
Active mixers operating at 23 GHz are designed and fabricated in SiGe technology. An integrated diode linearizer is used to improve the linearity of the mixer. Measurement and simulation show excellent agreement. Typically, 10 dB double-sideband noise figure, 10 dBm IIP3 and 2 dB conversion gain are measured, featuring low noise and high linearity in a same design.
Keywords
BiCMOS integrated circuits; Diodes; Germanium silicon alloys; Impedance; Linearity; Mixers; Noise figure; Radio frequency; Resistors; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2003 33rd European
Conference_Location
Munich, Germany
Print_ISBN
1-58053-834-7
Type
conf
DOI
10.1109/EUMA.2003.340972
Filename
4143036
Link To Document