Title :
A 23 GHz Active Mixer with Integrated Diode Linearizer in SiGe BiCMOS Technology
Author :
Bao, Mingquan ; Li, Yinggang ; Cathelin, Andreia
Author_Institution :
Ericsson AB, Ericsson Research, MHSERC, Flöjelbergsgatan 2A, 43184 Mölndal, Sweden, Tel: +46 31 7472057
Abstract :
Active mixers operating at 23 GHz are designed and fabricated in SiGe technology. An integrated diode linearizer is used to improve the linearity of the mixer. Measurement and simulation show excellent agreement. Typically, 10 dB double-sideband noise figure, 10 dBm IIP3 and 2 dB conversion gain are measured, featuring low noise and high linearity in a same design.
Keywords :
BiCMOS integrated circuits; Diodes; Germanium silicon alloys; Impedance; Linearity; Mixers; Noise figure; Radio frequency; Resistors; Silicon germanium;
Conference_Titel :
Microwave Conference, 2003 33rd European
Conference_Location :
Munich, Germany
Print_ISBN :
1-58053-834-7
DOI :
10.1109/EUMA.2003.340972
