DocumentCode :
2214292
Title :
The reliability of MLCC by the additives associated with the grain size and sintering condition
Author :
Kim, Hyun Duk ; Kim, Eung Kwon ; Lee, Tae Yong ; Kim, Bong Suk ; Woo, Byong Chul ; Song, Joon Tae
Author_Institution :
Sungkyunkwan Univ., Seoul
Volume :
1
fYear :
2006
fDate :
22-25 Oct. 2006
Firstpage :
478
Lastpage :
479
Abstract :
The reliability of mulitilayer ceramic capacitors (MLCCS) with Ni internal electrodes has been studied from the viewpoint of partial oxygen pressure (Po2) during firing. It is shown that the load-life time of the insulation resistance (IR) was prolonged by firing under low Po2, annealing after firing, and the addition of dopants. It is also shown that the generation of oxygen vacancies led to the degradation of IR. Annealing treatment for the oxidation of the dielectric body accelerates the dielectric aging of MLCC. It is found that the appropriate control of the Po2 during firing can improve the reliability of MLCCs with Ni electrodes to a level as high as that of MLCCs with precious metal electrodes. Thus, we have developed an MLCC with Ni electrodes that features high reliability and a capacitance of 2.2 muF for the X7R characteristic.
Keywords :
additives; ageing; annealing; ceramic capacitors; dielectric bodies; sintering; MLCC reliability; X7R characteristics; additives; annealing treatment; dielectric aging; dielectric body accelerate; grain size; insulation resistance; internal electrode; metal electrode; mulitilayer ceramic capacitor; partial oxygen pressure; sintering condition; Annealing; Capacitors; Ceramics; Degradation; Dielectrics and electrical insulation; Electrodes; Firing; Grain size; Immune system; Oxidation; BaTiO3; MLCC; X7R; the reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0540-4
Electronic_ISBN :
978-1-4244-0541-1
Type :
conf
DOI :
10.1109/NMDC.2006.4388825
Filename :
4388825
Link To Document :
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