Random network transistors of carbon nanotubes directly grown on glass substrate

Author

Bae, Eun Ju ; Min, Yo-Sep ; Kim, Un Jeong ; Park, Wanjun

Author_Institution

Mater. & Dev. Res. Center, Samsung Adv.Inst. of Technol., Kyeongki

Volume

1

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

482

Lastpage

483

Abstract

We report a transistor of randomly networked single-walled carbon nanotubes (SWNTs) grown on glass by using water plasma CVD. The density of the nanotube on pre-patterned region was more than 50/ mum² which is much larger than the percolation threshold. The nanotube network transistors were fabricated with Al₂O₃ for the gate oxide and a conducting and transparent ZnO for the back-gate. These nanotube active devices may be fitted to thin film transistor applications for future opto-electronics.

Keywords

carbon nanotubes; glass structure; plasma CVD; thin film transistors; SWNT; chemical vapour deposition; gate oxide; glass substrate; random network transistor; single-walled carbon nanotube; thin film transistor application; water plasma CVD; Aluminum oxide; Carbon nanotubes; Glass; Nanoscale devices; Plasma applications; Plasma devices; Plasma temperature; Substrates; Thin film transistors; Zinc oxide; Conducting ZnO fims; Glass substrate; SWNT; Thin Film Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE

Conference_Location

Gyeongju

Print_ISBN

978-1-4244-0540-4

Electronic_ISBN

978-1-4244-0541-1

Type

conf

DOI

10.1109/NMDC.2006.4388827

Filename

4388827