1.8 GHz tunable filter in Si technology

Author

Pipilos, Spyros ; Tsividis, Yannis ; Fenk, Josef

Author_Institution

Div. of Comput. Sci., Nat. Tech. Univ. of Athens, Greece

fYear

1996

fDate

5-8 May 1996

Firstpage

189

Lastpage

192

Abstract

An active filter using integrated inductors has been implemented in Si bipolar technology. The filter has a second-order bandpass response, with quality factor tunable through Q enhancement and center frequency tunable through reactance multiplication. For a nominal center frequency of 1.8 GHz and a quality factor of 35, the filter has a 1 dB compression dynamic range of 40 dB, and draws 8 mA from a 3 V supply

Keywords

Q-factor; UHF filters; UHF integrated circuits; active filters; application specific integrated circuits; band-pass filters; bipolar analogue integrated circuits; circuit tuning; elemental semiconductors; inductors; silicon; 1.8 GHz; 3 V; 8 mA; Q enhancement; Si; active filter; bipolar technology; center frequency; compression dynamic range; integrated inductors; quality factor; reactance multiplication; second-order bandpass response; tunable filter; Active circuits; Active filters; Active inductors; Band pass filters; Circuit optimization; Dynamic range; Parasitic capacitance; Q factor; Resonant frequency; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 1996., Proceedings of the IEEE 1996

Conference_Location

San Diego, CA

Print_ISBN

0-7803-3117-6

Type

conf

DOI

10.1109/CICC.1996.510540

Filename

510540