Title :
1.8 GHz tunable filter in Si technology
Author :
Pipilos, Spyros ; Tsividis, Yannis ; Fenk, Josef
Author_Institution :
Div. of Comput. Sci., Nat. Tech. Univ. of Athens, Greece
Abstract :
An active filter using integrated inductors has been implemented in Si bipolar technology. The filter has a second-order bandpass response, with quality factor tunable through Q enhancement and center frequency tunable through reactance multiplication. For a nominal center frequency of 1.8 GHz and a quality factor of 35, the filter has a 1 dB compression dynamic range of 40 dB, and draws 8 mA from a 3 V supply
Keywords :
Q-factor; UHF filters; UHF integrated circuits; active filters; application specific integrated circuits; band-pass filters; bipolar analogue integrated circuits; circuit tuning; elemental semiconductors; inductors; silicon; 1.8 GHz; 3 V; 8 mA; Q enhancement; Si; active filter; bipolar technology; center frequency; compression dynamic range; integrated inductors; quality factor; reactance multiplication; second-order bandpass response; tunable filter; Active circuits; Active filters; Active inductors; Band pass filters; Circuit optimization; Dynamic range; Parasitic capacitance; Q factor; Resonant frequency; Tunable circuits and devices;
Conference_Titel :
Custom Integrated Circuits Conference, 1996., Proceedings of the IEEE 1996
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-3117-6
DOI :
10.1109/CICC.1996.510540
