Title :
A 2.5 GHz monolithic silicon image reject filter
Author :
Macedo, Jose ; Copeland, Miles ; Schvan, Peter
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
Abstract :
A low power 2.5 GHz monolithic silicon bipolar image rejection filter for superheterodyne receiver application is presented; which uses an on-chip inductor and a negative resistance circuit to realize a notch filter with better than 50 dB rejection (measured) at the image frequency. Using 0.8 micron BiCMOS technology a tuned amplifier was fabricated with 1.9 GHz passband, a deep notch at 2.5 GHz to attenuate the image frequency (assuming 300 MHz intermediate frequency (IF)), and 3.2 mA current consumption at +3 V. A second chip incorporated a varactor to add notch frequency tuning capability over a 239 MHz range
Keywords :
BiCMOS analogue integrated circuits; active networks; inductors; negative resistance devices; notch filters; radio receivers; superheterodyne receivers; varactors; 0.8 micron; 2.5 GHz; 3 V; 3.2 mA; BiCMOS technology; Si; bipolar technology; current consumption; frequency tuning capability; image frequency; image rejection filter; intermediate frequency; negative resistance circuit; notch filter; on-chip inductor; superheterodyne receiver application; tuned amplifier; varactor; BiCMOS integrated circuits; Electrical resistance measurement; Filters; Frequency measurement; Inductors; Passband; Power measurement; Semiconductor device measurement; Silicon; Varactors;
Conference_Titel :
Custom Integrated Circuits Conference, 1996., Proceedings of the IEEE 1996
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-3117-6
DOI :
10.1109/CICC.1996.510541
