DocumentCode :
2214531
Title :
New developments in processing cathodic arc plasmas
Author :
McKenzie, D.R. ; Yin, Y. ; Gerstner, E. ; Bilek, M.M.M.
Author_Institution :
Sch. of Phys., Sydney Univ., NSW, Australia
Volume :
2
fYear :
1996
fDate :
21-26 Jul 1996
Firstpage :
839
Abstract :
Filtering of the plasma by curved solenoidal ducts is well known as a method of removing macroparticles. By analysing the interactions of planar probes with the drifting plasma of the cathodic arc, new insights have been obtained into the operation of these ducts. Theoretical modelling of these interactions suggests, and experiment confirms, that the use of a separate biased electrode on the inside of the duct gives enhanced transmission. Theoretical modelling of a negatively biased planar electrode lying parallel to the drift velocity and experiment show that ions are captured effectively producing a macroparticle free film. The application of pulsed high voltage to the substrate is treated theoretically and a model is proposed which gives a good agreement with the profile of a silicon surface coated and simultaneously implanted with titanium
Keywords :
Langmuir probes; arcs (electric); elemental semiconductors; ion implantation; plasma deposition; plasma transport processes; silicon; substrates; titanium; Si:Ti; cathodic arc plasmas processing; curved solenoidal ducts; drift velocity; drifting plasma; enhanced transmission; ions; macroparticle free film; macroparticles removal; planar probes interactions; plasma filtering; pulsed high voltage; separate biased electrode; silicon surface; theoretical modelling; titanium coating; titanium implantation; Ducts; Electrodes; Electron mobility; Filtering; Plasma materials processing; Probes; Silicon; Substrates; Surface treatment; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Discharges and Electrical Insulation in Vacuum, 1996. Proceedings. ISDEIV., XVIIth International Symposium on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-2906-6
Type :
conf
DOI :
10.1109/DEIV.1996.545481
Filename :
545481
Link To Document :
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