DocumentCode
2214554
Title
Design and On-Wafer Measurement of a W-Band Via-Less CPW RF Probe Pad to Microstrip Transition
Author
Zheng, G. ; Kirby, P. ; Rodriguez, A. ; Papapolymerou, J. ; Tentzeris, M. ; Dunleavy, L.
Author_Institution
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA. zemily@ece.gatech.edu
fYear
2003
fDate
Oct. 2003
Firstpage
443
Lastpage
446
Abstract
A very wide band via-less coplanar waveguide RF probe pad to microstrip transition is presented. The simulation with Agilent´s Momentum (MOM) shows that a 3 dB bandwidth of 173% can be achieved from 10GHz to 110GHz with an average loss of 0.4dB, and 0.2dB at 70GHz. The fabrication was done on 100¿m thick high resistivity silicon wafer, and two measurement methods were used to obtain the s-parameters of the transition. Measured results show that the insertion loss has an average value of 0.4dB from 40GHz to 100GHz, with the return loss better than 13dB.
Keywords
Bandwidth; Conductivity; Coplanar waveguides; Fabrication; Message-oriented middleware; Microstrip; Probes; Radio frequency; Waveguide transitions; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2003 33rd European
Conference_Location
Munich, Germany
Print_ISBN
1-58053-834-7
Type
conf
DOI
10.1109/EUMA.2003.340985
Filename
4143049
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