DocumentCode :
2214554
Title :
Design and On-Wafer Measurement of a W-Band Via-Less CPW RF Probe Pad to Microstrip Transition
Author :
Zheng, G. ; Kirby, P. ; Rodriguez, A. ; Papapolymerou, J. ; Tentzeris, M. ; Dunleavy, L.
Author_Institution :
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA. zemily@ece.gatech.edu
fYear :
2003
fDate :
Oct. 2003
Firstpage :
443
Lastpage :
446
Abstract :
A very wide band via-less coplanar waveguide RF probe pad to microstrip transition is presented. The simulation with Agilent´s Momentum (MOM) shows that a 3 dB bandwidth of 173% can be achieved from 10GHz to 110GHz with an average loss of 0.4dB, and 0.2dB at 70GHz. The fabrication was done on 100¿m thick high resistivity silicon wafer, and two measurement methods were used to obtain the s-parameters of the transition. Measured results show that the insertion loss has an average value of 0.4dB from 40GHz to 100GHz, with the return loss better than 13dB.
Keywords :
Bandwidth; Conductivity; Coplanar waveguides; Fabrication; Message-oriented middleware; Microstrip; Probes; Radio frequency; Waveguide transitions; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2003 33rd European
Conference_Location :
Munich, Germany
Print_ISBN :
1-58053-834-7
Type :
conf
DOI :
10.1109/EUMA.2003.340985
Filename :
4143049
Link To Document :
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