Body effects in tri-gate bulk FinFETs for DTMOS

Author

Han, Jin-Woo ; Lee, Choong-Ho ; Park, Donggun ; Choi, Yang-Kyu

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon

Volume

1

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

208

Lastpage

209

Abstract

Body factor was investigated in tri-gate bulk FinFET for the first time. Increment of on-state current and decrement of off-state current are achieved by body bias modulation. Electrical measurements were carried out to investigate the body effects in view points of a fin width that governs short-channel effects. A wide fin width was preferable for a dynamic threshold voltage operation and wide range of the threshold adjustment, however, the fin width is limited for suppression of short-channel effects. This work can provide feasibility of DTMOS application of FinFETs for low-power and high-performance application

Keywords

MOSFET; semiconductor device measurement; semiconductor device testing; DTMOS; body bias modulation; body effects; dynamic threshold voltage; electrical measurements; off-state current; on-state current; short-channel effects; tri-gate bulk FinFET; Computer science; Degradation; Diodes; Electric variables measurement; Fabrication; FinFETs; MOSFET circuits; Research and development; Silicon; Threshold voltage; FinFET; body effects; dynamic threshold voltage; high performance; low power;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE

Conference_Location

Gyeongju

Print_ISBN

978-1-4244-0540-4

Electronic_ISBN

978-1-4244-0541-1

Type

conf

DOI

10.1109/NMDC.2006.4388842

Filename

4388842