Title :
Synthesis, purification, and integration of carbon nanotube for electronic device application
Author :
Park, Wanjun ; Min, Yo-Sep ; Bae, Eun Ju ; Kim, Un Jung
Author_Institution :
Mater. & Devices Res. Center, Samsung Adv. Inst. of Technol., Kyeongki
Abstract :
Since lower growth temperature should significantly enhance the flexible choice of substrate and compatibility of CNT growth with the standard CMOS technology for CNT-based electronics, plasma enhanced chemical vapor deposition (PECVD) have been recently utilized to grow nanotubes at lower temperatures. In this paper, we will present our recent successes of SWNTs which are selectively grown on the defined positions by prepatterning at low temperature (-400 C) by PECVD, and its performance as field effect transistosr (FET). The evaluation of the grown SWNTs by PECVE was done by Raman scattering and high resolution TEM and scanning electron microscopy.
Keywords :
CMOS integrated circuits; carbon nanotubes; plasma CVD; CMOS technology; Raman scattering; carbon nanotube integration; carbon nanotube purification; carbon nanotube synthesis; complementary metal-oxide-semiconductor; electronic device application; field effect transistor; plasma enhanced chemical vapor deposition; scanning electron microscopy; CMOS technology; Carbon nanotubes; Chemical technology; Chemical vapor deposition; FETs; Plasma applications; Plasma chemistry; Plasma devices; Plasma temperature; Purification;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0540-4
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388848
