Synthesis, purification, and integration of carbon nanotube for electronic device application

Author

Park, Wanjun ; Min, Yo-Sep ; Bae, Eun Ju ; Kim, Un Jung

Author_Institution

Mater. & Devices Res. Center, Samsung Adv. Inst. of Technol., Kyeongki

Volume

1

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

224

Lastpage

225

Abstract

Since lower growth temperature should significantly enhance the flexible choice of substrate and compatibility of CNT growth with the standard CMOS technology for CNT-based electronics, plasma enhanced chemical vapor deposition (PECVD) have been recently utilized to grow nanotubes at lower temperatures. In this paper, we will present our recent successes of SWNTs which are selectively grown on the defined positions by prepatterning at low temperature (-400 C) by PECVD, and its performance as field effect transistosr (FET). The evaluation of the grown SWNTs by PECVE was done by Raman scattering and high resolution TEM and scanning electron microscopy.

Keywords

CMOS integrated circuits; carbon nanotubes; plasma CVD; CMOS technology; Raman scattering; carbon nanotube integration; carbon nanotube purification; carbon nanotube synthesis; complementary metal-oxide-semiconductor; electronic device application; field effect transistor; plasma enhanced chemical vapor deposition; scanning electron microscopy; CMOS technology; Carbon nanotubes; Chemical technology; Chemical vapor deposition; FETs; Plasma applications; Plasma chemistry; Plasma devices; Plasma temperature; Purification;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE

Conference_Location

Gyeongju

Print_ISBN

978-1-4244-0540-4

Electronic_ISBN

978-1-4244-0541-1

Type

conf

DOI

10.1109/NMDC.2006.4388848

Filename

4388848