DocumentCode
2214750
Title
Contactless Microwave Hall Effect Transport in ZnSe
Author
Prati, Enrico ; Faralli, Stefano ; Annino, Giuseppe ; Martinelli, Massimo
Author_Institution
ISTITUTO PER I PROCESSI CHIMICO-FISICI, CNR, VIA G. MORUZZI, I-56124 PISA, ITALY, +39 315 2234; LABORATORIO NAZIONALE MDM, INFM, VIA OLIVETTI 2, I-20014 AGRATE BRIANZA (MILAN), ITALY, +39 039 6037324
fYear
2003
fDate
Oct. 2003
Firstpage
479
Lastpage
482
Abstract
Quantum well 2DEG recent effects such as Bose-gas of excitons, quantum Hall related zero resistance and ultra low doped gases in III-V require high quality samples. The same physics could be replicated in II-VI compounds, but the control of the quality by transport characterization leads to difficulties related to the ohmic contacts. Measurements of the mobility of n-ZnSe samples have been performed by a contactless method at 20GHz by using a bimodal cavity resonator and a two-channel vector network analyzer. Values obtained for measured samples match with dc Hall measurements, towards an accurate determination of the mobility in quantum well II-VI based heterostructures, where the 2DEG lies.
Keywords
Cavity resonators; Electrical resistance measurement; Excitons; Gases; Hall effect; III-V semiconductor materials; Ohmic contacts; Performance evaluation; Physics; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2003 33rd European
Conference_Location
Munich, Germany
Print_ISBN
1-58053-834-7
Type
conf
DOI
10.1109/EUMA.2003.340994
Filename
4143058
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