DocumentCode :
2214977
Title :
Planar ICP scaled up to 16"
Author :
Yu, Zhiqiang ; Collins, G.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Colorado State Univ., Fort Collins, CO, USA
fYear :
2002
fDate :
26-30 May 2002
Firstpage :
338
Abstract :
Summary form only given. Inductively coupled plasma (ICP) has been widely used in dry processing equipment for microelectronic integrated circuit fabrication. We have demonstrated successful operation of the planar ICP source up to 16" in diameter. Emphasis was on effective RF coupling and antenna design to achieve process uniformity. A prototype spiral design planar antenna to couple RF power into large dimension of plasma was achieved. It keeps small inductance of each segment for RF tuning, resulting in low Q values in circuitry for enhancement of inductive coupling. The flat antenna embedded into the RF coupling window made efficient power coupling for the large window size. A 16 inch diameter of planar oxygen plasma had been generated with the oxygen radical [O] flux of 2.5/spl times/10/sup 8/ atm/cm/sup 2/ at 10 Torr pressure and 150 W of RF power on the 16" device. It provides up to a few microns-per-minute ash rate for photoresist removal. The uniformity was managed by antenna structure and discharge gas pressure. Hydrogen plasma also generated in these devices with [H] flux of 1/spl times/10/sup 18/ atm/cm/sup 2/.
Keywords :
antennas in plasma; integrated circuit manufacture; integrated circuit technology; plasma applications; plasma sources; 16 inch; 8 inch; H flux; O flux; RF coupling window; RF power; RF tuning; antenna design; antenna structure; ash rate; discharge gas pressure; dry processing equipment; inductive coupling enhancement; large dimension plasma; low Q circuitry; microelectronic integrated circuit fabrication; photoresist removal; planar inductively coupled plasma source; process uniformity; segment inductance; spiral design planar antenna; uniformity management; Coupling circuits; Fabrication; Microelectronics; Plasma devices; Plasma materials processing; Plasma sources; Process design; Prototypes; Radio frequency; Spirals;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 2002. ICOPS 2002. IEEE Conference Record - Abstracts. The 29th IEEE International Conference on
Conference_Location :
Banff, Alberta, Canada
Print_ISBN :
0-7803-7407-X
Type :
conf
DOI :
10.1109/PLASMA.2002.1030683
Filename :
1030683
Link To Document :
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