Title :
A 128×128 pixel CMOS area image sensor with multiplexed pixel level A/D conversion
Author :
Yang, David X D ; Fowler, Boyd ; El Gamal, Abbas
Author_Institution :
Inf. Syst. Lab., Stanford Univ., CA, USA
Abstract :
A 128×128 pixel CMOS area image sensor with a sigma-delta A/D Converter shared within each group of 2×2 pixels is described. Each pixel comprises a photodiode and 4 MOSFETs and occupies 20.8 μm×19.8 μm with a fill factor of 30% in a 0.8 μm three layer metal one layer poly CMOS process. At 3.3 V, the dynamic range is >83 dB, the dissipation is <1 mW and the fixed pattern noise is ≈1%
Keywords :
CMOS integrated circuits; image sensors; multiplexing; sigma-delta modulation; 0.8 micron; 1 mW; 128 pixel; 3.3 V; CMOS area image sensor; MOSFET; dynamic range; fill factor; fixed pattern noise; multiplexed pixel level A/D conversion; photodiode; power dissipation; sigma-delta A/D converter; three layer metal one layer poly CMOS process; CMOS image sensors; CMOS process; CMOS technology; Circuits; Image converters; Image sensors; MOSFETs; Photodiodes; Pixel; Sensor arrays;
Conference_Titel :
Custom Integrated Circuits Conference, 1996., Proceedings of the IEEE 1996
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-3117-6
DOI :
10.1109/CICC.1996.510563
