Simulation of current-injection and all-optical nanophotonic semiconductor devices with multi-level multi-electron FDTD model

Author

Huang, Yingyan ; Ho, Seng-Tiong

Author_Institution

Northwestern Univ., Evanston

Volume

1

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

256

Lastpage

257

Abstract

Simulating the spatial-temporal behaviors of novel nanophotonic semiconductor devices is challenging, as it has to deal with complex electromagnetic structures and semiconductor carrier dynamics. We report successful simulation of current-injection photonic-crystal laser and all-optical photonic transistor using our multi-level multi-electron FDTD model.

Keywords

finite difference time-domain analysis; nanoelectronics; optical materials; photonic crystals; phototransistors; semiconductor lasers; semiconductor process modelling; spatiotemporal phenomena; all-optical nanophotonic semiconductor device; current-injection photonic-crystal laser; current-injection simulation; multilevel multielectron FDTD model; spatial-temporal behavior; Computational modeling; Finite difference methods; Laser modes; Nanoscale devices; Photonic crystals; Pump lasers; Semiconductor devices; Semiconductor lasers; Semiconductor materials; Time domain analysis; FDTD; all-optical switch; phtonic crystal laser;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE

Conference_Location

Gyeongju

Print_ISBN

978-1-4244-0541-1

Electronic_ISBN

978-1-4244-0541-1

Type

conf

DOI

10.1109/NMDC.2006.4388859

Filename

4388859