Title :
CMOS state of the arts and future potential
Author_Institution :
Stanford Univ., Stanford
Abstract :
The progress made up to now for CMOS scaling in drive current improvement and suppression of off current of MOSFET, with introductions of new structures, new materials for channel, gate insulator and gate electrode is reviewed. Also discussed will be future potential of a variety of revolutionary nanoelectronic devices such as nanowires/nanotubes and new materials based non-volatile memories from integrated electronics point of view.
Keywords :
CMOS integrated circuits; nanoelectronics; random-access storage; CMOS scaling; MOSFET; drive current improvement; gate electrode; gate insulator; nonvolatile memories; off current suppression; revolutionary nanoelectronic devices; Conducting materials; Electron mobility; III-V semiconductor materials; MOSFET circuits; Nanotubes; Nanowires; Nonvolatile memory; Potential well; Silicon; Tensile strain; CMOS scaling; High mobility channel; Metal gate work function; Nanotube; Nanowire; Nonvolatile memory;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0541-1
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388864
