Title :
Modeling impact ionization in advanced bipolar transistors for device/circuit simulation
Author :
Jeong, Hanggeun ; Fossum, Jerry G.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
Impact ionization in advanced bipolar transistors, which depends on the complex electric-field distribution in the collector, is accounted for in a physical (seminumerical) device model. The collector analysis comprehensively treats quasi-saturation, and thus accounts for the formation of the current-induced space-charge region at high currents as well as the modulation of the junction space-charge region. Simulated (with MMSPICE) and measured characteristics are compared in support of the model
Keywords :
bipolar transistors; impact ionisation; semiconductors; space charge; MMSPICE; bipolar transistors; circuit simulation; collector analysis; current-induced space-charge region; electric-field distribution; impact ionization; physical device model; quasi-saturation; Bipolar transistors; Circuit simulation; Current density; Current-voltage characteristics; Electric breakdown; Electrons; Impact ionization; Integrated circuit modeling; Semiconductor process modeling; Silicon;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1988.51057
