A flexible thin-film transistor with high field-effect mobility by using carbon nanotubes

Author

Han, Xuliang ; Janzen, Daniel C. ; Vaillancourt, Jarrod ; Lu, Xuejun

Author_Institution

Brewer Sci.Inc., Rolla

Volume

1

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

296

Lastpage

297

Abstract

This paper describes a flexible thin-film transistor (TFT) fabricated on a standard transparency fdm. The carrier transport layer of this TFT is a high-density ultrapure carbon nanotube (CNT) film formed by using an electronic-grade CNT solution from Brewer Science, Inc. This CINT-TFT demonstrates a high field-effect mobility of ~ 48,000 cm²/Vs and a large current-carrying capacity of > 35 mA. Such a device would become a critical building block of next-generation low-cost large-area high-speed flexible electronics.

Keywords

carbon nanotubes; thin film transistors; TFT fabrication; carbon nanotube; carrier transport layer; electronic-grade CNT solution; flexible thin-film transistor; high field-effect mobility; standard transparency film; Carbon nanotubes; Chromium; Electrodes; FETs; Fabrication; Flexible electronics; Gold; Optical films; Organic materials; Thin film transistors; carbon nanotube; field-effect mobility; flexible electronics; thin-film transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE

Conference_Location

Gyeongju

Print_ISBN

978-1-4244-0541-1

Electronic_ISBN

978-1-4244-0541-1

Type

conf

DOI

10.1109/NMDC.2006.4388871

Filename

4388871