DocumentCode
2215295
Title
A 1.8 GHz Fully Integrated Low Voltage LC VCO in Silicon on Sapphire CMOS
Author
Bhatia, Rahul ; Jalan, Umesh ; Chakraborty, Sudipto ; Yoon, Sang-Woong ; Nuttinck, Sebastien ; Pinel, Stephane ; Laskar, Joy
Author_Institution
Georgia Institute of Technology, Yamacraw Design Center, 791 Atlantic Drive, Atlanta, GA 30332, USA, bhatia@ece.gatech.edu
fYear
2003
fDate
Oct. 2003
Firstpage
579
Lastpage
582
Abstract
This paper presents the design, fabrication and measurement of a low voltage VCO operating at 1.8 GHz and fabricated in 0.5¿m Silicon On Sapphire CMOS (SOS-CMOS) process. The VCO operates with supply voltage as low as 1V. The tuning range was measured to be 14% and the measured phase noise was -117.5 dBc/ Hz at an offset frequency of 1 MHz from the 1.77 GHz carrier. The VCO and the buffers consume 14.7 mW power from a 1.5V supply.
Keywords
CMOS process; Fabrication; Frequency measurement; Low voltage; Noise measurement; Phase measurement; Phase noise; Silicon; Tuning; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2003 33rd European
Conference_Location
Munich, Germany
Print_ISBN
1-58053-834-7
Type
conf
DOI
10.1109/EUMA.2003.341019
Filename
4143083
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