Title :
A 1.8 GHz Fully Integrated Low Voltage LC VCO in Silicon on Sapphire CMOS
Author :
Bhatia, Rahul ; Jalan, Umesh ; Chakraborty, Sudipto ; Yoon, Sang-Woong ; Nuttinck, Sebastien ; Pinel, Stephane ; Laskar, Joy
Author_Institution :
Georgia Institute of Technology, Yamacraw Design Center, 791 Atlantic Drive, Atlanta, GA 30332, USA, bhatia@ece.gatech.edu
Abstract :
This paper presents the design, fabrication and measurement of a low voltage VCO operating at 1.8 GHz and fabricated in 0.5¿m Silicon On Sapphire CMOS (SOS-CMOS) process. The VCO operates with supply voltage as low as 1V. The tuning range was measured to be 14% and the measured phase noise was -117.5 dBc/ Hz at an offset frequency of 1 MHz from the 1.77 GHz carrier. The VCO and the buffers consume 14.7 mW power from a 1.5V supply.
Keywords :
CMOS process; Fabrication; Frequency measurement; Low voltage; Noise measurement; Phase measurement; Phase noise; Silicon; Tuning; Voltage-controlled oscillators;
Conference_Titel :
Microwave Conference, 2003 33rd European
Conference_Location :
Munich, Germany
Print_ISBN :
1-58053-834-7
DOI :
10.1109/EUMA.2003.341019
