Indium phosphide nanostructures on hydrogenated silicon formed on metallic and dielectric substrates

Author

Kobayashi, Nobuhiko P. ; Wang, Shih-Yuan ; Li, Xuema ; Williams, R.Stanley ; Wang, Suqin ; Schmidt, Holger

Author_Institution

Hewlett-Packard Labs., Palo Alto

Volume

1

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

300

Lastpage

301

Abstract

Indium phosphide nanostructures grown on hydrogenated silicon films are studied. The hydrogenated silicon films were deposited on various metallic and dielectric substrate surfaces, then indium phosphide nanostructures were grown on the hydrogenated silicon films. The hydrogenated silicon films and the indium phosphide nanostructures were examined to assess their structural, chemical and optical properties.

Keywords

III-V semiconductors; elemental semiconductors; hydrogen; indium compounds; nanostructured materials; nanotechnology; semiconductor growth; silicon; InP; InP - Binary; Si; Si - Surface; chemical properties; dielectric subtrates; hydrogenated silicon film; indium phosphide nanostructures; optical properties; structural properties; Annealing; Chemicals; Chromium; Dielectric substrates; Indium phosphide; Nanostructured materials; Nanostructures; Optical films; Semiconductor films; Silicon; hydrogenated silicon; indium phosphide; metalorganic chemical vapor deposition; nanostructure; nanowires;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE

Conference_Location

Gyeongju

Print_ISBN

978-1-4244-0541-1

Electronic_ISBN

978-1-4244-0541-1

Type

conf

DOI

10.1109/NMDC.2006.4388873

Filename

4388873