Title :
Indium phosphide nanostructures on hydrogenated silicon formed on metallic and dielectric substrates
Author :
Kobayashi, Nobuhiko P. ; Wang, Shih-Yuan ; Li, Xuema ; Williams, R.Stanley ; Wang, Suqin ; Schmidt, Holger
Author_Institution :
Hewlett-Packard Labs., Palo Alto
Abstract :
Indium phosphide nanostructures grown on hydrogenated silicon films are studied. The hydrogenated silicon films were deposited on various metallic and dielectric substrate surfaces, then indium phosphide nanostructures were grown on the hydrogenated silicon films. The hydrogenated silicon films and the indium phosphide nanostructures were examined to assess their structural, chemical and optical properties.
Keywords :
III-V semiconductors; elemental semiconductors; hydrogen; indium compounds; nanostructured materials; nanotechnology; semiconductor growth; silicon; InP; InP - Binary; Si; Si - Surface; chemical properties; dielectric subtrates; hydrogenated silicon film; indium phosphide nanostructures; optical properties; structural properties; Annealing; Chemicals; Chromium; Dielectric substrates; Indium phosphide; Nanostructured materials; Nanostructures; Optical films; Semiconductor films; Silicon; hydrogenated silicon; indium phosphide; metalorganic chemical vapor deposition; nanostructure; nanowires;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0541-1
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388873
