Title :
Impact of initial-oxidation on 1/f noise and subthreshold swing of n-channel MOSFETs
Author :
Joo, Han-Soo ; Han, In-Shik ; Goo, Tae-Kyu ; Yoo, Ook-Sang ; Choi, Won-Ho ; Lee, Ga-Won ; Lee, Hi-Deok
Author_Institution :
Chungnam Nat. Univ., Daejeon
Abstract :
The impact of initial-oxidation on Low-frequency noise and subthreshold swing of MOSFETs is investigated. The low-frequency noise is improved significantly with initial-oxidation and SS reduction is observed. Analysis on experimental results shed light on the well-known controversy about the origin of low-frequency noise. In this paper, the impact of initial-oxidation in thin gate oxide n-channel MOSFETs is characterized across gate-bias IV.
Keywords :
1/f noise; MOSFET; oxidation; semiconductor device noise; 1/f noise; initial-oxidation impact; low-frequency noise; n-channel MOSFET; subthreshold swing; 1f noise; Degradation; Fluctuations; Low-frequency noise; MOSFETs; Noise figure; Noise measurement; Oxidation; Plasma measurements; Semiconductor device noise; drain current degradation; flicker noise; initial oxidation; subthreshold swing; threshold voltage;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0541-1
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388880
