Title :
Interfacial layer thickness dependence of the low- frequency noise in high-k dielectric MOSFETs
Author :
Nam, Hyungdo ; Lee, Jungil ; Han, Ilki ; Yang, Haesuk
Author_Institution :
Nano Device Res. Center, Korea Inst. of Sci. & Technol., Seoul
Abstract :
We present the results of simulation study on the low-frequency excess noise in high-k HfO2/SiO2 dual dielectric n-MOSFET´s. Based on the ´unified model´ where the tunneling to the traps in the oxides is the major noise generation mechanism, we show how the low frequency noise density depends on the thickness of the interfacial oxide layer.
Keywords :
MOSFET; hafnium compounds; high-k dielectric thin films; semiconductor device models; silicon compounds; HfO2-SiO2; HfO2-SiO2 - Interface; high k dielectric MOSFET; interfacial layer thickness dependence; low frequency excess noise; low frequency noise density; noise generation; Dielectric devices; Electron traps; Fluctuations; Frequency; Hafnium oxide; High-K gate dielectrics; Low-frequency noise; MOSFETs; Semiconductor device noise; Tunneling; MOSFETs; high-k dielectric; low-frequency noise;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0540-4
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388881
