DocumentCode :
2215544
Title :
Improved sheath model for the biased substrate in vacuum arc with cathode spots
Author :
Cheng, Zhong-Yuan ; Zoy, Ji-Yan ; Yang, Lei ; Li-Chun Cheng
Author_Institution :
Dept. of Electr. Eng., Huazhong Univ. of Sci. & Technol., Hubei, China
Volume :
2
fYear :
1996
fDate :
21-26 Jul 1996
Firstpage :
863
Abstract :
This paper presents an improved model that describes the sheath around negatively biased substrate in Vacuum Arc Deposition (VAD) plasma. The model consists of 1) Poisson´s equation for potential distribution, 2) Boltzmann´s distribution for electrons, 3) Cosine distribution for ions. The simplified model-equations have been numerically solved for potential distribution and sheath thickness under various process parameters. The obtained sheath thickness versus bias voltage is compared with those from Child-Langmuir equation. It shows that the sheath has a very sharp edge, and that its thickness is much larger than Debye length
Keywords :
Boltzmann equation; Poisson distribution; ceramics; plasma arc sprayed coatings; plasma arc spraying; plasma deposited coatings; plasma deposition; titanium compounds; vacuum deposited coatings; vacuum deposition; Child-Langmuir equation; Debye length; Poisson´s equation potential distribution; TiN; biased substrate; electrons Boltzmann´s distribution; improved sheath model; ions cosine distribution; sheath thickness; simplified model-equations; vacuum arc cathode spots; vacuum arc deposition plasma; Boltzmann distribution; Cathodes; Electrons; Plasma measurements; Plasma sheaths; Plasma simulation; Plasma temperature; Poisson equations; Vacuum arcs; Vacuum technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Discharges and Electrical Insulation in Vacuum, 1996. Proceedings. ISDEIV., XVIIth International Symposium on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-2906-6
Type :
conf
DOI :
10.1109/DEIV.1996.545485
Filename :
545485
Link To Document :
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