Improved sheath model for the biased substrate in vacuum arc with cathode spots

Author

Cheng, Zhong-Yuan ; Zoy, Ji-Yan ; Yang, Lei ; Li-Chun Cheng

Author_Institution

Dept. of Electr. Eng., Huazhong Univ. of Sci. & Technol., Hubei, China

Volume

2

fYear

1996

fDate

21-26 Jul 1996

Firstpage

863

Abstract

This paper presents an improved model that describes the sheath around negatively biased substrate in Vacuum Arc Deposition (VAD) plasma. The model consists of 1) Poisson´s equation for potential distribution, 2) Boltzmann´s distribution for electrons, 3) Cosine distribution for ions. The simplified model-equations have been numerically solved for potential distribution and sheath thickness under various process parameters. The obtained sheath thickness versus bias voltage is compared with those from Child-Langmuir equation. It shows that the sheath has a very sharp edge, and that its thickness is much larger than Debye length

Keywords

Boltzmann equation; Poisson distribution; ceramics; plasma arc sprayed coatings; plasma arc spraying; plasma deposited coatings; plasma deposition; titanium compounds; vacuum deposited coatings; vacuum deposition; Child-Langmuir equation; Debye length; Poisson´s equation potential distribution; TiN; biased substrate; electrons Boltzmann´s distribution; improved sheath model; ions cosine distribution; sheath thickness; simplified model-equations; vacuum arc cathode spots; vacuum arc deposition plasma; Boltzmann distribution; Cathodes; Electrons; Plasma measurements; Plasma sheaths; Plasma simulation; Plasma temperature; Poisson equations; Vacuum arcs; Vacuum technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Discharges and Electrical Insulation in Vacuum, 1996. Proceedings. ISDEIV., XVIIth International Symposium on

Conference_Location

Berkeley, CA

Print_ISBN

0-7803-2906-6

Type

conf

DOI

10.1109/DEIV.1996.545485

Filename

545485