Inverstigation of a-SixGe1∼x:H nano films deposited by RF magnetron sputtering for heterojunction silicon solar cells

Hydrogenated amorphous silicon germanium (a-SiGe:H) thin films were deposited at 400degC by RF magnetron sputtering, with forming gas (mixture of argon and 4% hydrogen). A film thickness of 100 nm was obtained by using a selective target of a-Si_xGe_1-x (x=0.92). In order to study the properties of the films prepared by this method, the samples were examined by alpha-step (alpha-step), atomic force microscopy (AFM) and scanning electron microscope (SEM) -energy dispersive X-ray (EDX). Measurements showed that this film has a nano-thickness and nano-morphology. And this film has a possibility for solar cells that the optical band gap of the thin film, which is from 1.7 to 1.0 eV. Accordingly, this film will be expected for improvement on heterojunction solar cells application ability.