Title :
The effects of nano-scale iron doping on superconductivity and microstructure of MgB2 bulk
Author :
Yang, Ye ; Ke, Chuan ; Wang, Lei ; Sun, Huihui ; Cheng, Cuihua ; Zhao, Yong
Author_Institution :
Key Lab. of Adv. Technol. of Mater., (Minist. of Educ. of China), Southwest Jiaotong Univ., Chengdu, China
Abstract :
Mg1-xFexB2 superconductor was prepared by in situ solid state reaction to study the effects of nano-iron doping on the superconductivity of MgB2. Two kinds of nano-iron sources were used: nano-iron particles and nano-iron wires. It was found that crystal structure was not affected by nano-iron doping for either form of dopant source. Tc, Jc, and Hirr were severely suppressed by iron nano-particles doping. In contrast, with iron nano-wires doping, Tc of the MgB2 superconductors were not changed remarkably, while their Jc and Hirr were slightly enhanced at all the temperature ranges investigated in this work. Under 4 T field, the sample doped with 1% wt iron nano-wires reached the highest Jc of 1.1 times 104 A/cm2 at 10 K and 2.2 times102 A/cm2 at 20 K, respectively. It was argued that the Fe nano-wires may be introduced into MgB2 as external pinning centers in high field region.
Keywords :
critical current density (superconductivity); crystal structure; doping; flux pinning; iron compounds; magnesium compounds; nanoparticles; nanowires; superconducting materials; superconducting transition temperature; Mg1-xFexB2; critical current density; critical temperature; crystal structure; external pinning center; flux pinning; irreversibility field; microstructure; nano-iron particle doping; nano-iron wires; solid state reaction; superconductivity; Doping; Flux pinning; Iron; Magnesium compounds; Microstructure; Nanoscale devices; Solid state circuits; Superconducting filaments and wires; Superconducting materials; Superconductivity; MgB2; critical current density; flux pinning; irreversibility field;
Conference_Titel :
Applied Superconductivity and Electromagnetic Devices, 2009. ASEMD 2009. International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-3686-6
Electronic_ISBN :
978-1-4244-3687-3
DOI :
10.1109/ASEMD.2009.5306637