Title :
Fabrication of high mobility p-type ZnO thin film by ampoule-tube method
Author :
Yoo, In-Sung ; So, Soon-Jin ; Park, Choon-Bae
Author_Institution :
Wonkwang Univ., Jeonbuk
Abstract :
The ZnO thin films, which has used spotlight of next generation short wavelength LEDs and LDs deposited based on RF magnetron sputtering is described in this study. The undoped ZnO thin films were deposited by RF magnetron sputtering system on GaAs0.6P0.4/GaP wafers. The thickness of ZnO thin films was about 2.1 mum which was measured by SE.M analysis after the sputtering process. 4N Phosphorus (P) was diffused into the undoped ZnO thin films in ampoule-tube which was performed at 630degC during 3 hr. We found the diffusion condition of the conductive ZnO films which had p-type properties with the highest mobility of above 532 cm2/Vs compared with other studies. PL spectra measured at 10 K for the purpose of analyzing optical properties of p-type ZnO thin film showed strong PL intensity in the UV emission band around 365~415 nm.
Keywords :
III-V semiconductors; semiconductor thin films; sputtering; zinc compounds; RF magnetron sputtering; ZnO; ZnO - Binary; ampoule tube method; high mobility p type thin film; optical properties; sputtering process; Conductive films; Fabrication; Gallium arsenide; Light emitting diodes; Optical films; Radio frequency; Sputtering; Thickness measurement; Transistors; Zinc oxide; Ampouletube; Diffusion; RF magnetron sputtering; The highest mobility; ZnO thin films; p-type ZnO;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0541-1
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388891
