Fabrication of high mobility p-type ZnO thin film by ampoule-tube method

Author

Yoo, In-Sung ; So, Soon-Jin ; Park, Choon-Bae

Author_Institution

Wonkwang Univ., Jeonbuk

Volume

1

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

538

Lastpage

539

Abstract

The ZnO thin films, which has used spotlight of next generation short wavelength LEDs and LDs deposited based on RF magnetron sputtering is described in this study. The undoped ZnO thin films were deposited by RF magnetron sputtering system on GaAs_0.6P_0.4/GaP wafers. The thickness of ZnO thin films was about 2.1 mum which was measured by SE.M analysis after the sputtering process. 4N Phosphorus (P) was diffused into the undoped ZnO thin films in ampoule-tube which was performed at 630degC during 3 hr. We found the diffusion condition of the conductive ZnO films which had p-type properties with the highest mobility of above 532 cm²/Vs compared with other studies. PL spectra measured at 10 K for the purpose of analyzing optical properties of p-type ZnO thin film showed strong PL intensity in the UV emission band around 365~415 nm.

Keywords

III-V semiconductors; semiconductor thin films; sputtering; zinc compounds; RF magnetron sputtering; ZnO; ZnO - Binary; ampoule tube method; high mobility p type thin film; optical properties; sputtering process; Conductive films; Fabrication; Gallium arsenide; Light emitting diodes; Optical films; Radio frequency; Sputtering; Thickness measurement; Transistors; Zinc oxide; Ampouletube; Diffusion; RF magnetron sputtering; The highest mobility; ZnO thin films; p-type ZnO;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE

Conference_Location

Gyeongju

Print_ISBN

978-1-4244-0541-1

Electronic_ISBN

978-1-4244-0541-1

Type

conf

DOI

10.1109/NMDC.2006.4388891

Filename

4388891