Title :
Defect analysis of N-doped p-type ZnO film fabricated by magnetron sputtering via photoluminescence spectra
Author :
Jin, Hu-Jie ; Kim, Deok-Kyu ; Park, Choon-Bae
Author_Institution :
Wonkwang Univ., Iksan
Abstract :
ZnO is a promising material to make high efficient ultraviolet (UV) or blue light emitting diodes (LEDs) due to its large binding energy and energy bandgap. In present study, we prepared an N-doped p-type ZnO thin film on (100) silicon substrate by RF magnetron sputtering in the mixture ambient of N2 and O2. accompanying with in-situ annealing at low pressure of 10Torr in O2 at 800degC. Photoluminescence (PL) analysis of the film showed UV emission related to exciton and donor-acceptor pair transition (DAP) and visible emission related to various kinds of defects. Via PL spectra analysis the reason of p-type conversion of ZnO thin film can be explained, which is in favor of getting high quality p-type ZnO films.
Keywords :
binding energy; light emitting diodes; photoluminescence; semiconductor doping; sputtering; thin film devices; zinc compounds; N-doped p-type ZnO film; ZnO; ZnO - Binary; binding energy; blue light emitting diodes; defect analysis; donor-acceptor pair transition; energy bandgap; magnetron sputtering; photoluminescence spectra; visible emission; Light emitting diodes; Magnetic analysis; Magnetic materials; Photoluminescence; Photonic band gap; Semiconductor thin films; Silicon; Sputtering; Substrates; Zinc oxide; N-doped p-type ZnO film; RF magnetron sputtering; defect; photoluminescence(PL);
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0541-1
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388893
