Title :
0.13 μm Low Voltage Logic Based RF CMOS Technology with 115GHz fT and 80GHz fMAX
Author :
Guo, J.C. ; Huang, C.H. ; Chan, K.T. ; Lien, W.Y. ; Wu, C.M. ; Sun, Y.C.
Author_Institution :
Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan. Phone: +886-3-5712121 ext. 54158, fax: +886-3-5724361, email: jcguo@ee.nctu.edu.tw
Abstract :
Superior RF CMOS of 115GHz fT and 80GHz fmax has been realized by 0.13 μm low voltage logic based RF CMOS technology by aggressive device scaling and optimized layout. NFmin of 2.2dB at 10GHz is achieved even without deep N-well and ground-shielded signal pad. P1dB of near 10dBm can fit bluetooth requirement and 55% PAE at 2.4 GHz address the good potential of sub-100nm CMOS for low voltage RF power applications
Keywords :
Bluetooth; CMOS logic circuits; CMOS technology; Fingers; Logic devices; Low voltage; Noise measurement; Performance gain; Radio frequency; Wireless communication;
Conference_Titel :
Microwave Conference, 2003 33rd European
Conference_Location :
Munich, Germany
Print_ISBN :
1-58053-834-7
DOI :
10.1109/EUMA.2003.341045
