DC and RF characteristics of HfO2 in metal-inaulator-metal capacitor

Author

Jeong, S.-W. ; Hae, Jung Sung ; Kim, K.S. ; Soon, J.Y. ; Roh, Y.

Author_Institution

Sch. of Inf. & Commun. Eng., Sungkyunkwan Univ., Suwon

Volume

1

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

546

Lastpage

547

Abstract

We have investigated the DC and RF characteristics of Si/SiO₂(~4mum)/Ti/Pt-HfO₂-Al metal-insulator-metal (MIM) devices. We demonstrate in this work that the MIM capacitors with high-k: HfO₂ films result in the better DC and RF properties than those obtained using either SiO₂ or Si₃N₄. Both high capacitance density and small frequency-dependent capacitance reduction were observed in the MIM capacitors in which HfO₂ was employed for an insulator.

Keywords

MIM devices; MIS capacitors; aluminium; hafnium compounds; high-k dielectric thin films; platinum; silicon; silicon compounds; titanium; DC characteristics; HfO₂; HfO₂ - Interface; MIM capacitors; MIM devices; RF characteristics; Si-SiO₂; Si-SiO₂ - Interface; Si₃N₄; Si₃N₄ - Interface; Ti-Pt-HfO₂-Al; Ti-Pt-HfO₂-Al - Interface; capacitance density; high-k HfO₂ films; metal-insulator-metal capacitor; Capacitance; Dielectrics and electrical insulation; Electrodes; Frequency measurement; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MIM capacitors; Radio frequency; Silicon; HfO2; MIM capacitor; high-k;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE

Conference_Location

Gyeongju

Print_ISBN

978-1-4244-0540-4

Electronic_ISBN

978-1-4244-0541-1

Type

conf

DOI

10.1109/NMDC.2006.4388895

Filename

4388895