Title :
DC and RF characteristics of HfO2 in metal-inaulator-metal capacitor
Author :
Jeong, S.-W. ; Hae, Jung Sung ; Kim, K.S. ; Soon, J.Y. ; Roh, Y.
Author_Institution :
Sch. of Inf. & Commun. Eng., Sungkyunkwan Univ., Suwon
Abstract :
We have investigated the DC and RF characteristics of Si/SiO2(~4mum)/Ti/Pt-HfO2-Al metal-insulator-metal (MIM) devices. We demonstrate in this work that the MIM capacitors with high-k: HfO2 films result in the better DC and RF properties than those obtained using either SiO2 or Si3N4. Both high capacitance density and small frequency-dependent capacitance reduction were observed in the MIM capacitors in which HfO2 was employed for an insulator.
Keywords :
MIM devices; MIS capacitors; aluminium; hafnium compounds; high-k dielectric thin films; platinum; silicon; silicon compounds; titanium; DC characteristics; HfO2; HfO2 - Interface; MIM capacitors; MIM devices; RF characteristics; Si-SiO2; Si-SiO2 - Interface; Si3N4; Si3N4 - Interface; Ti-Pt-HfO2-Al; Ti-Pt-HfO2-Al - Interface; capacitance density; high-k HfO2 films; metal-insulator-metal capacitor; Capacitance; Dielectrics and electrical insulation; Electrodes; Frequency measurement; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MIM capacitors; Radio frequency; Silicon; HfO2; MIM capacitor; high-k;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0540-4
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388895
