Title :
Simulations of Schottky-barrier nanowire field effect transistors
Author :
Lee, Jaehyun ; Ahn, Chiyui ; Shin, Mincheol
Author_Institution :
Inf. & Commun. Univ., Daejeon
Abstract :
Quantum simulations of Schottky-barrier silicon nanowire field effect transistors and carbon nanotube field effect transistors have been carried out by solving the Poisson´s equation and non-equilibrium Green´s function self-consistently and their device characteristics are investigated.
Keywords :
Green´s function methods; Poisson equation; Schottky barriers; carbon nanotubes; field effect transistors; nanoelectronics; nanotube devices; nanowires; Poisson equation; Schottky-barrier silicon nanowire field effect transistors; carbon nanotube field effect transistors; nonequilibrium Green function; quantum simulations; CNTFETs; FETs; Green´s function methods; MOS devices; Nanoscale devices; Poisson equations; Schottky barriers; Schrodinger equation; Silicon; Voltage; Schottky barrier; carbon nanotube field effect transistor; silicon nanowire field effect transistor;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0540-4
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388898
