DocumentCode
2216286
Title
The effect of emitter sidewall isolation on the emitter junction in a double layer polysilicon bipolar process
Author
Wilson, M.C. ; Gold, D. ; Hunt, P.C. ; Booker, G.R.
Author_Institution
Plessey Res. Ltd., Towcester, UK
fYear
1988
fDate
12-13 Sep 1988
Firstpage
128
Lastpage
131
Abstract
The 2D equi-concentration dopant contours are revealed for the first time for a cross-section through a 1 μm double-layer polysilicon bipolar device. The planarity of the emitter junction is shown to be dependent on the presence of emitter sidewall spacer filters. Implications for ultrashallow junction devices are presented
Keywords
bipolar integrated circuits; doping profiles; elemental semiconductors; integrated circuit technology; silicon; 1 micron; 2D equi-concentration dopant contours; Si; double layer polysilicon bipolar process; emitter junction; emitter sidewall isolation; spacer filters; ultrashallow junction devices; Chemicals; Circuits; Dielectrics; Electron emission; Electron microscopy; Etching; Inorganic materials; Protection; Silicon; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988
Conference_Location
Minneapolis, MN
Type
conf
DOI
10.1109/BIPOL.1988.51063
Filename
51063
Link To Document