Title :
The two dimensional eelectron gas in BST/Al0.3Ga0.7N/GaN double heterostructure
Author :
Liu, Ying ; Yang, Chuanren ; Zhang, Jihua ; Wu, Song ; Chen, Hongwei
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
In this paper, we take account of spontaneous and piezoelectric polarization effect of BST and AlGaN. At the hetero-interface in BST/ Al0.3Ga0.7N /GaN double heterostructure, one-dimensional Poisson-Schrodinger equation using nonuniform mesh are solved self-consistently in dependence of the polarization and thickness of BST and the thickness of AlGaN barrier layer. BST/Al0.3Ga0.7N/GaN double heterostructure conduction band and the two-dimensional electron gas(2DEG) density are investigated. The results indicate that the 2DEG density of BST/Al0.3Ga0.7N/GaN is larger than that of Al0.3Ga0.7N/GaN, for a 8nm BST on AlGaN/GaN structure, the 2DEG density reached 1.85times1013 cm-2, which is 23% higher than that of AlGaN/GaN structure.
Keywords :
III-V semiconductors; Poisson equation; Schrodinger equation; aluminium compounds; barium compounds; conduction bands; dielectric polarisation; gallium compounds; piezoelectric materials; semiconductor heterojunctions; semiconductor-insulator boundaries; strontium compounds; two-dimensional electron gas; wide band gap semiconductors; 1D Poisson-Schrodinger equation; 2DEG density; BaxSr1-xTiO3-Al0.3Ga0.7N-GaN; barrier layer thickness; double heterostructure conduction; heterointerface; piezoelectric material; piezoelectric polarization effect; spontaneous polarization effect; two dimensional electron gas; Aluminum gallium nitride; Binary search trees; Capacitive sensors; Electrons; Ferroelectric materials; Gallium nitride; Optical polarization; Piezoelectric polarization; Poisson equations; Road transportation; 2 DEG; AlGaN; BST; GaN; heterostructure; polarizatio;
Conference_Titel :
Applied Superconductivity and Electromagnetic Devices, 2009. ASEMD 2009. International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-3686-6
Electronic_ISBN :
978-1-4244-3687-3
DOI :
10.1109/ASEMD.2009.5306665
