DocumentCode
2216673
Title
Interlayer magnetostatic fields in submicron cells for high density magnetic random access memory
Author
Lee, D.H. ; Lim, S.H.
Author_Institution
Korea Univ., Seoul
Volume
1
fYear
2006
fDate
22-25 Oct. 2006
Firstpage
612
Lastpage
613
Abstract
A element method (COMSOL) is used to calculate magnetic field intensity resulting from the free poles formed at the magnetic cell edges. The magnetic cell stack and dimensions are relevant to high density magnetic random access memory applications. The calculated field intensity is found to be large, indicating the importance of considering magnetostatic interactions in device applications.
Keywords
magnetic fields; magnetic storage; magnetic tunnelling; random-access storage; COMSOL package; Interlayer magnetostatic fields; magnetic cell edges; magnetic cell stack; magnetic field intensity; magnetic random access memory; submicron cells; Equations; Magnetic analysis; Magnetic anisotropy; Magnetic separation; Magnetic tunneling; Magnetostatics; Perpendicular magnetic anisotropy; Random access memory; Saturation magnetization; Thermal stability; finite element method calculation; magnetic random access memo; magnetic tunnel junctions; magnetostatic interactions;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location
Gyeongju
Print_ISBN
978-1-4244-0541-1
Electronic_ISBN
978-1-4244-0541-1
Type
conf
DOI
10.1109/NMDC.2006.4388928
Filename
4388928
Link To Document