Title :
Interlayer magnetostatic fields in submicron cells for high density magnetic random access memory
Author :
Lee, D.H. ; Lim, S.H.
Author_Institution :
Korea Univ., Seoul
Abstract :
A element method (COMSOL) is used to calculate magnetic field intensity resulting from the free poles formed at the magnetic cell edges. The magnetic cell stack and dimensions are relevant to high density magnetic random access memory applications. The calculated field intensity is found to be large, indicating the importance of considering magnetostatic interactions in device applications.
Keywords :
magnetic fields; magnetic storage; magnetic tunnelling; random-access storage; COMSOL package; Interlayer magnetostatic fields; magnetic cell edges; magnetic cell stack; magnetic field intensity; magnetic random access memory; submicron cells; Equations; Magnetic analysis; Magnetic anisotropy; Magnetic separation; Magnetic tunneling; Magnetostatics; Perpendicular magnetic anisotropy; Random access memory; Saturation magnetization; Thermal stability; finite element method calculation; magnetic random access memo; magnetic tunnel junctions; magnetostatic interactions;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0541-1
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388928
