The development of the nanocrystal silicon film FEA pressure sensor

Author

Jinhua, Liu ; Hongyi, Lin ; Xing, Zhang

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

Volume

2

fYear

2001

fDate

22-25 Oct. 2001

Firstpage

793

Abstract

A novel field emission array (FEA) has been fabricated using a new method, which greatly simplifies the whole process. Factors influencing the emitting current of the FEA are analyzed theoretically and nanocrystal silicon films are deposited on the FEA to improve the emitting characteristics due to their excellent conductivity and particular configuration. Emitting characteristics of the FEA with and without nanocrystal silicon films are tested and compared. The design and the main process are proposed.

Keywords

elemental semiconductors; etching; microsensors; nanostructured materials; pressure sensors; semiconductor thin films; silicon; vacuum microelectronics; Si; anisotropic chemical etching; conductivity; electrostatic bonding; emitting characteristics; emitting current; field emission array; nanocrystal Si film FEA pressure sensor; vacuum microelectronic technology; Anodes; Cathodes; Field emitter arrays; Nanocrystals; Semiconductor films; Sensor phenomena and characterization; Sensor systems and applications; Silicon; Tactile sensors; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.982014

Filename

982014