Negatice resistance in a magnetic barrier device

Author

Joo, Sungjung ; Hong, Jinki ; Rhie, Kungwon ; Shin, Kyung-Ho ; Kim, Jungseung ; Lee, B.C.

Author_Institution

Nano Devices Res. center, Korea Inst. of Sci. & Technol., Seoul

Volume

1

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

616

Lastpage

617

Abstract

We have observed the negative value of longitudinal resistance in a InAs two-dimensional electron gas (2DEG) system in which magnetic barriers have been made in the form of the serial junctions of positive and negative magnetic-field regions. When the transport mechanism is ballistic (at low temperature), the measured longitudinal resistance of our device shows negative or positive values depending on the sign of the externally applied magnetic field.

Keywords

electron gas; magnetic devices; negative resistance; longitudinal resistance; magnetic barrier device; magnetic-field regions; negative resistance; serial junctions; transport mechanism; two-dimensional electron gas system; Electrical resistance measurement; Hall effect; Magnetic devices; Magnetic field measurement; Magnetic fields; Magnetic flux; Magnetoresistance; Member and Geographic Activities Board committees; Probes; Voltage; Hall effect; InAs; Magnetoresistance; Micromagnet;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE

Conference_Location

Gyeongju

Print_ISBN

978-1-4244-0540-4

Electronic_ISBN

978-1-4244-0541-1

Type

conf

DOI

10.1109/NMDC.2006.4388930

Filename

4388930