Title :
Negatice resistance in a magnetic barrier device
Author :
Joo, Sungjung ; Hong, Jinki ; Rhie, Kungwon ; Shin, Kyung-Ho ; Kim, Jungseung ; Lee, B.C.
Author_Institution :
Nano Devices Res. center, Korea Inst. of Sci. & Technol., Seoul
Abstract :
We have observed the negative value of longitudinal resistance in a InAs two-dimensional electron gas (2DEG) system in which magnetic barriers have been made in the form of the serial junctions of positive and negative magnetic-field regions. When the transport mechanism is ballistic (at low temperature), the measured longitudinal resistance of our device shows negative or positive values depending on the sign of the externally applied magnetic field.
Keywords :
electron gas; magnetic devices; negative resistance; longitudinal resistance; magnetic barrier device; magnetic-field regions; negative resistance; serial junctions; transport mechanism; two-dimensional electron gas system; Electrical resistance measurement; Hall effect; Magnetic devices; Magnetic field measurement; Magnetic fields; Magnetic flux; Magnetoresistance; Member and Geographic Activities Board committees; Probes; Voltage; Hall effect; InAs; Magnetoresistance; Micromagnet;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0540-4
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388930
