DocumentCode :
2216864
Title :
Copper-phthalocyanine based organic thin film transistor
Author :
Kwak, T.H. ; Kang, H.S. ; Kim, K. ; Cho, M.Y. ; Lee, J.W. ; Joo, J.
Author_Institution :
Dept. of Phys., Korea Univ., Seoul
Volume :
1
fYear :
2006
fDate :
22-25 Oct. 2006
Firstpage :
630
Lastpage :
631
Abstract :
Copper-phthalocyanine based organic thin film transistors (OTFTs) were fabricated. Cu-Pc thin films as an active layer were deposited onto the SiO2 layer as a gate insulator by using organic molecular beam deposition system. The OTFT devices showed p-type characteristics with field-effect mobility and threshold voltage as 1.22x10-3 cm2/Vsand -40 V, respectively. The activation energy was estimated to be 0.073 eV, through the temperature dependence of carrier mobility.
Keywords :
insulators; molecular beam epitaxial growth; organic semiconductors; thin film transistors; activation energy; carrier mobility; copper-phthalocyanine; field-effect mobility; gate insulator; organic molecular beam deposition system; organic thin film transistor; threshold voltage; Chemicals; Crystallization; Insulation; Organic thin film transistors; Scanning electron microscopy; Sputtering; Surface morphology; Temperature dependence; Thin film transistors; X-ray scattering; carrier mobility; copper-phthalocyanine; organic thin film transistor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0540-4
Electronic_ISBN :
978-1-4244-0541-1
Type :
conf
DOI :
10.1109/NMDC.2006.4388937
Filename :
4388937
Link To Document :
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