DocumentCode :
2216897
Title :
Influences of various dielectrics materials on p++ silicon diaphragm
Author :
Wu, Junmiao ; Zou, Deshu ; Gao, Guo ; Li, Lan ; Niu, Nanhui ; Shen, Guangdi
Author_Institution :
Electron. Eng. Dept., Beijing Polytech. Univ., China
Volume :
2
fYear :
2001
fDate :
22-25 Oct. 2001
Firstpage :
823
Abstract :
Effects of various dielectric materials on thermal stress in p++ silicon diaphragm were analyzed. In this work the modeling of thin film deposition based on the finite element analysis (FEA) is described. The theoretical results predict the change of mechanical performance when various dielectric materials were deposited on p++ silicon diaphragm.
Keywords :
boron; diaphragms; dielectric materials; dielectric thin films; elemental semiconductors; finite element analysis; pressure sensors; silicon; thermal stresses; FEA; Si:B; dielectrics materials; finite element analysis; mechanical performance; p++ silicon diaphragm; pressure sensor; thermal stress; thin film deposition; Biosensors; Boron; Dielectric devices; Dielectric materials; Etching; Mechanical sensors; Silicon; Tensile stress; Thermal expansion; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
Type :
conf
DOI :
10.1109/ICSICT.2001.982022
Filename :
982022
Link To Document :
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