DocumentCode
2216897
Title
Influences of various dielectrics materials on p++ silicon diaphragm
Author
Wu, Junmiao ; Zou, Deshu ; Gao, Guo ; Li, Lan ; Niu, Nanhui ; Shen, Guangdi
Author_Institution
Electron. Eng. Dept., Beijing Polytech. Univ., China
Volume
2
fYear
2001
fDate
22-25 Oct. 2001
Firstpage
823
Abstract
Effects of various dielectric materials on thermal stress in p++ silicon diaphragm were analyzed. In this work the modeling of thin film deposition based on the finite element analysis (FEA) is described. The theoretical results predict the change of mechanical performance when various dielectric materials were deposited on p++ silicon diaphragm.
Keywords
boron; diaphragms; dielectric materials; dielectric thin films; elemental semiconductors; finite element analysis; pressure sensors; silicon; thermal stresses; FEA; Si:B; dielectrics materials; finite element analysis; mechanical performance; p++ silicon diaphragm; pressure sensor; thermal stress; thin film deposition; Biosensors; Boron; Dielectric devices; Dielectric materials; Etching; Mechanical sensors; Silicon; Tensile stress; Thermal expansion; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.982022
Filename
982022
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