Title :
An IC chip of magneto-sensitive silicon transistors sensor
Author_Institution :
Dept. of Electron. Eng., Heilongjiang Univ., Harbin, China
Abstract :
A new type differential structure of double-injection long-base magnetic-sensitive Si transistors are the basis of magnetic field sensors. The IC chip of magnetic-sensitive transistors is deigned and the integrated circuit switches from a 1 level to a 0 level when the magnetic-sensitive transistors generator experiences a field level of 400 G. The Schmitt trigger section prevents turn on of the 1 level until the field falls back below 200 G. Such chips may be used as part of Hall effect keyboards to avoid the contact bounce effects of mechanical switches. The IC magnetic-sensitive transistor sensor was fabricated using the poly-silicon epitaxial and VMOS technology.
Keywords :
MOS integrated circuits; elemental semiconductors; integrated circuit measurement; magnetic sensors; silicon; trigger circuits; Hall effect keyboards; IC chip; IC magnetic-sensitive transistor sensor; Schmitt trigger section; Si; VMOS technology; double-injection long-base magnetic-sensitive Si transistors; integrated circuit switches; magnetic field sensors; magneto-sensitive silicon transistors sensor; poly-silicon epitaxial technology; FET integrated circuits; Hall effect; Keyboards; Magnetic sensors; Magnetic switching; Mechanical sensors; Silicon; Switches; Switching circuits; Trigger circuits;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982024