DocumentCode
2216937
Title
Theoretical study of electrostatic-field-induced bending of membrane in shunt-capacitance MEMS RF switches
Author
Ming, Jia ; Fangmin, Guo ; Ziqiang, Zhu ; Zongsheng, Lai ; Jianpeng, Chu ; Yuelin, Wang ; Ge Yiaohong ; Siqing, Chen ; Weiyuan, Wang
Author_Institution
Dept. of Electron. Eng., East China Normal Univ., Shanghai, China
Volume
2
fYear
2001
fDate
22-25 Oct. 2001
Firstpage
835
Abstract
The paper describes the simulation of the performance of MEMS RF switches by using ANSYS as a primary tool. It starts with mechanic field, then electrostatic field, and then couples the effect of the two fields. The Young´s modulus is one of the major factors of the pull-down voltage, it analyzes the Au, compose of different ratio Al-Si, and the simulation is very significantly guiding experiments.
Keywords
Young´s modulus; bending; electrostatic devices; membranes; microswitches; ANSYS; Au; SiAl; Young´s modulus; electrostatic field; electrostatic-field-induced bending; mechanic field; membrane; pull-down voltage; shunt-capacitance MEMS RF switches; Biomembranes; Capacitance; Conductors; Dielectrics; Electrodes; Electrostatics; Micromechanical devices; Radio frequency; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.982025
Filename
982025
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