Technology-dependent modeling of deep-submicron MOSFET´s and ULSI circuits

Author

Zhou, Xing ; Chiah, Siau Ben ; Lim, Khee Yong ; Wang, Yuwen ; Yu, Xing ; Chwa, Sally ; See, Alex ; Chan, Lap

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

Volume

2

fYear

2001

fDate

22-25 Oct. 2001

Firstpage

855

Abstract

This paper presents a summary of a unified compact I_ds model for deep-submicron (DSM) MOSFET´s developed from scratch over the past few years. The model covers the full range of gate-length (down to the threshold roll-off region) and biases for a given technology, which requires minimum measurement data to extract its 28 fitting parameters following a prioritized two-iteration sequence. The model has been implemented in an automated extraction program (DOUST), which can be used in aiding new technology development, and in predicting process effects on ULSI circuit performance when implemented in the circuit simulator (XSIM).

Keywords

MOSFET; ULSI; semiconductor device models; ULSI circuit performance; automated extraction program; deep-submicron MOSFET; gate-length; prioritized two-iteration sequence; threshold roll-off region; unified compact model; Data mining; Doping; Equations; Geometry; MOSFET circuits; Parameter extraction; Predictive models; Solid modeling; Threshold voltage; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.982030

Filename

982030