Title :
Simulation of 100nm SOI MOSFET with FINFET structure
Author :
Liu, Enfeng ; Lin, Changhai ; Liu, Xiaoyan ; Han, Ruqi
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
A SOI MOSFET with FINFET structure is simulated, I-V characteristics, electron distribution under gate, and quantum effect of inversion layer are investigated and compared with conventional single gate. Simulated results show the SOI devices present peformance superior to bulk silicon devices. The 3-dimensional effect of this device is also analyzed.
Keywords :
MOSFET; inversion layers; semiconductor device models; silicon-on-insulator; FINFET structure; I-V characteristics; SOI MOSFET; electron distribution; inversion layer; Analytical models; CMOS technology; Dielectric substrates; Dielectrics and electrical insulation; Doping; Electrons; FinFETs; MOSFET circuits; Silicon devices; Silicon on insulator technology;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982036
