Title :
A procedure to extract mobility degradation, series resistance and threshold voltage of SOI MOSFETs in the saturation region
Author :
Ortiz-Conde, A. ; Sanchez, F. J Garcfa ; Cerdeira, A. ; Estrada, M. ; Flandre, D. ; Liou, J.J.
Author_Institution :
Laboratorio de Electronica dal Estado Solido (LEES), Univ. Simon Bolivar, Caracas, Venezuela
Abstract :
Parasitic series resistance and mobility degradation are two important parameters for modeling and circuit simulation of MOSFETs. We present a new method to extract these two parameters from the current-voltage characteristics of SOI MOSFETs biased in the saturation region. This method is based on an integration function which reduces errors associated with the extraction procedure. Measured data and simulation results of SOI MOSFETs are used to test and verify the present method.
Keywords :
MOSFET; carrier mobility; semiconductor device models; silicon-on-insulator; SOI MOSFETs; mobility degradation; parasitic series resistance; saturation region; threshold voltage; Circuit simulation; Circuit testing; Data mining; Degradation; Educational institutions; Electrical resistance measurement; Integrated circuit measurements; MOS devices; MOSFETs; Threshold voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982037
