Title :
Implementation of a current-mode class-S RF power amplifier with GaN HEMTs for LTE-Advanced
Author :
Ma, Rui ; Wang, Zhancang ; Yang, Xiaokun ; Lanfranco, Sandro
Author_Institution :
Res., Nokia Siemens Networks, Beijing, China
Abstract :
In this work, a current-mode class-S RF power amplifier demonstrator working around 1 GHz has been designed and implemented following a partitioning design approach. Based on this approach, the entire class-S system has been systematically divided into several sub-modules; each sub-module is then separately designed, fabricated, and characterized. The unique advantages of this specialized design technique for implementing such complicated RF PA circuits have been presented. To our best knowledge, modulated signal with 80 MHz modulation bandwidth has been for the first time applied to test a class-S PA in the GHz range. Finally, the operating principles of the current-mode class-S power amplifier have been proven by the designed demonstrator with GaN HEMTs and key design considerations have been pointed out.
Keywords :
III-V semiconductors; Long Term Evolution; current-mode circuits; high electron mobility transistors; power amplifiers; radiofrequency amplifiers; wide band gap semiconductors; GaN; HEMT; LTE-Advanced; RF PA circuit; bandwidth 80 MHz; class-S system; current-mode class-S RF power amplifier demonstrator; partitioning design approach; Bandwidth; Gallium nitride; HEMTs; MODFETs; Power amplifiers; Radio frequency; Switches; Class-S; GaN HEMT; Partitioning Design Approach; Switch-mode PA;
Conference_Titel :
Wireless and Microwave Technology Conference (WAMICON), 2012 IEEE 13th Annual
Conference_Location :
Cocoa Beach, FL
Print_ISBN :
978-1-4673-0129-9
Electronic_ISBN :
978-1-4673-0128-2
DOI :
10.1109/WAMICON.2012.6208440
