Title :
RF micromachined varactors with wide tuning range
Author :
Dec, A. ; Suyama, K.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
Abstract :
Polysilicon surface micromachined varactors using two- and three-plate structures with 1.5:1 and 1.87:1 tuning ranges, respectively, are presented. The tuning ranges are near-theoretical limits and can be obtained within 4.4 V control voltage. The two-plate varactor has a nominal capacitance of 2.05 pF and a Q-factor of 20 at 1 GHz.
Keywords :
Q-factor; UHF diodes; elemental semiconductors; micromachining; silicon; tuning; varactors; 1 GHz; 2.05 pF; 4.4 V; Q-factor; RF micromachined varactors; Si; polysilicon varactors; three-plate structure; two-plate structure; wide tuning range; Gold; Parasitic capacitance; Q factor; Radio frequency; Resonant frequency; Springs; Tuning; Varactors; Voltage; Voltage-controlled oscillators;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4439-1
DOI :
10.1109/RFIC.1998.682340
