Performance analysis of distributed HEMT model with geometry

Author

Hoque, M.E. ; Heimlich, M. ; Parker, A.E. ; Mahon, Simon J.

Author_Institution

Dept. of Electron. Eng., Macquarie Univ., North Ryde, NSW, Australia

fYear

2012

fDate

15-17 April 2012

Firstpage

1

Lastpage

4

Abstract

The characteristics of each unit cell in a linearly scaled distributed HEMT model is analyzed. This provides insight into the internal behavior of any region of a whole device and hence guides optimization of device geometry and metallization according to need. The linear relationship between drain current and device widths are explained using the unit cell drain current. This is useful to predict the drain current characteristics for unmeasured device geometry. The effects of manifold on gain-bandwidth product of multi-finger devices for various widths are also presented by applying the linear model. This analysis explores the optimum width and number of fingers of a device to reduce the internal loss of a multi-fingered device.

Keywords

geometry; high electron mobility transistors; optimisation; device widths; distributed HEMT model; geometry; multifingered device; optimization; performance analysis; unit cell drain current; Current measurement; Fingers; Geometry; HEMTs; Integrated circuit modeling; Manifolds; Noise measurement; Distributed model; extrinsic parameters; intrinsic parameters; lumped element network; transistor geometry;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless and Microwave Technology Conference (WAMICON), 2012 IEEE 13th Annual

Conference_Location

Cocoa Beach, FL

Print_ISBN

978-1-4673-0129-9

Electronic_ISBN

978-1-4673-0128-2

Type

conf

DOI

10.1109/WAMICON.2012.6208443

Filename

6208443